View DMV1500LF5_239679.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
DMV1500L
DAMPER + MODULATION DIODE FOR VIDEO
DAMPER
MODULATION
MAIN PRODUCT CHARACTERISTICS MODUL IF(AV) VRRM trr (max) VF (max) 3A 600 V 50 ns 1.4 V DAMPER 4A 1500 V 170 ns 1.5 V
1 2 3
1
2
3
FEATURES AND BENEFITS
s s s s s
Insulated TO-220AB (Bending option F5 available)
s
s
s
Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2500 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation
DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer.
ABSOLUTE RATINGS (limiting values, per diode) Value Symbol VRRM IFSM Tstg Tj Parameter MODUL DAMPER Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal 600 35 1500 50 V A C Unit
- 40 to + 150 150
July 2001 - Ed: 3A
1/9
DMV1500L
THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Damper junction to case Modulation junction to case Parameter Value 5.5 6 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Value Symbol Parameter Test conditions Tj = 25C Typ. VF * IR **
Pulse test :
Tj = 125C Typ. 1.1 100 Max. 1.5 1000
Unit
Max. 1.7 100
Forward voltage drop Reverse leakage current
* tp = 380 s, < 2% **tp = 5 ms, < 2%
IF = 4 A VR = 1500V
1.2
V A
To evaluate the maximum conduction losses of the DAMPER diode use the following equations : 2 P = 1.2 x IF(AV) + 0.075 x IF (RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Value Symbol VF * IR **
Pulse test :
Parameter Forward voltage drop Reverse leakage current
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
Test conditions IF = 3A VR = 600V
Tj = 25C Typ. Max. 1.8 20
Tj = 125C Typ. 1.1 3 Max. 1.4 50
Unit V A
To evaluate the maximum conduction losses of the MODULATION diode use the following equations : 2 P = 1.12 x IF(AV) + 0.092 x IF (RMS)
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 850 Max. Unit ns
trr
Reverse recovery time
Tj = 25C
130
170
ns
2/9
(R)
DMV1500L
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 110 Max. 350 Unit ns
trr
Reverse recovery time
Tj = 25C
50
ns
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 4A dIF/dt = 80A/s VFR = 3V IF = 6.5A dIF/dt = 50A/s VFR = 3V VFP Peak forward voltage IF = 4A dIF/dt = 80A/s IF = 6.5A dIF/dt = 50A/s Tj = 100C Value Typ. Max. 450 Unit ns
Tj = 25C
450
Tj = 100C Tj = 25C
28 13
36 17
V
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 3A dIF/dt = 80A/s VFR = 2V IF = 3A dIF/dt = 80A/s Tj = 100C Value Typ. Max. 240 Unit ns
VFP
Peak forward voltage
Tj = 100C
8
V
(R)
3/9
DMV1500L
Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, = 0.45) (damper diode).
PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4 5 6
Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, = 0.45) (modulation diode).
PF(av)(W)
Ip(A) 0 1 2 3
Ip(A) 0 1 2 3 4 5 6
Fig. 2-1: Average forward current versus ambient temperature (damper diode).
IF(av)(A) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
Fig. 2-2: Average forward current versus ambient temperature (modulation diode).
IF(av)(A) 3.5
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
3.0 2.5 2.0 1.5
T
1.0
tp
T
=tp/T
Tamb(C) 50 75 100 125 150
0.5 0.0
=tp/T
tp
Tamb(C) 50 75 100 125 150
0
25
0
25
Fig. 3-1: Forward voltage drop versus forward current (damper diode).
IFM(A) 30 25 20 15 10 5 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Maximum Tj=125C Maximum Tj=25C Typical Tj=125C
Fig. 3-2: Forward voltage drop versus forward current (modulation diode).
IFM(A) 30 25 20 15 10 5 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Maximum Tj=125C Maximum Tj=25C Typical Tj=125C
4/9
(R)
DMV1500L
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration.
K=[Zth(j-c)/Rth(j-c)] 1.0
= 0.5
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode).
IM(A) 30 25 20
0.5
= 0.2 = 0.1
15
T
0.2
Single pulse
10 5
IM t
Tc=100C
tp(s) 0.1 1E-3 1E-2 1E-1
=tp/T
tp
=0.5
t(s) 1E-2 1E-1 1E+0
1E+0
0 1E-3
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode).
IM(A) 30 25 20 15 10
IM
Fig. 6-1: Reverse recovery charges versus diF/dt (damper diode).
Qrr(nC) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1
IF=IF(av) 90% confidence Tj=125C
Tc=100C
5 0 1E-3
t
=0.5
t(s) 1E-2 1E-1 1E+0
dIF/dt(A/s) 0.2 0.5 1.0 5.0
Fig. 6-2: Reverse recovery charges versus diF/dt (modulation diode).
Qrr(nC) 200
IF=IF(av) 90% confidence Tj=125C
Fig. 7-1: Reverse recovery current versus diF/dt (damper diode).
IRM(A) 3.0 2.5 2.0
IF=IF(av) 90% confidence Tj=125C
150 100 50 dIF/dt(A/s) 0 0.1 1.0 10.0 100.0
1.5 1.0 0.5 0.0 0.1 0.2 dIF/dt(A/s) 0.5 1.0 5.0
(R)
5/9
DMV1500L
Fig. 7-2: Reverse recovery current versus diF/dt (modulation diode).
IRM(A) 6 5 4 3 2 1 dIF/dt(A/s) 0 1 10 100 200
IF=IF(av) 90% confidence Tj=125C
Fig. 8-1: Transient peak forward voltage versus dIF/dt (damper diode).
VFP(V) 50 45 40 35 30 25 20 15 10 5 0
IF=IF(av) 90% confidence Tj=125C
dIF/dt(A/s) 0 20 40 60 80 100 120 140
Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode).
VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0
IF=IF(av) 90% confidence Tj=125C
Fig. 9-1: Forward recovery time versus dIF/dt (damper diode).
tfr(ns) 700 650 600 550 500 450 400 350 300 250 200
IF=IF(av) 90% confidence Tj=125C Vfr=3V
dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200
dIF/dt(A/s) 0 20 40 60 80 100 120 140
Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode).
tfr(ns) 200 175 150 125 100 75 50 25 0 0 20 40 60 dIF/dt(A/s)
Fig. 10-1: Dynamic parameters versus junction temperature (damper diode).
VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125C] 1.2
IF=IF(av) 90% confidence Tj=125C Vfr=2V
1.0 0.8
VFP
0.6
IRM
0.4
Qrr
0.2 0.0
80 100 120 140 160 180 200
Tj(C) 0 20 40 60 80 100 120 140
6/9
(R)
DMV1500L
Fig. 10-2: Dynamic parameters versus junction temperature (modulation diode).
VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125C] 1.2 1.0
Modulation
Fig. 11: Junction capacitance versus reverse voltage applied (typical values).
C(pF) 100
Tj=25C F=1MHz
0.8 0.6
VFP
10
IRM
Damper
0.4 0.2 0.0 0
Qrr
Tj(C) 20 40 60 80 100 120 140
VR(V) 1 1 10 100 200
ORDERING INFORMATION
DMV1500L
/
F5
Lead bending (option)
Damper and modulation diodes for video
(R)
7/9
DMV1500L
PACKAGE MECHANICAL DATA TO-220AB F5 OPTION REF.
B b2 C
L F
OI
A l4
a1
c2 l3
R2 a3 R1
l2
c2 b1 e M1
c1
A a1 a3 B b1 b2 C c1 c2 e F I L I2 l3 l4 M1 R1 R2
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 15.20 15.90 0.598 0.625 24.16 26.90 0.951 1.059 1.65 2.41 0.064 0.094 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 15.80 16.80 0.622 0.661 16.40 typ. 0.645 typ. 2.92 3.30 0.114 0.129 1.40 typ. 0.055 typ. 1.40 typ. 0.055 typ.
PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT
s s s
Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.
1mm
3.1mm 2.2mm
2.54mm
8/9
(R)
DMV1500L
PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF.
B C
Millimeters Min. Typ. Max. Min. 15.90 0.598 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.20
Inches Typ. Max. 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102
b2
A
L F I A
a1 a2 B b1 b2 C c1
l4
a1
c2
c2 e F I I4 L
c1
l3
l2 a2
15.80 16.40 16.80 0.622 0.646 0.661
b1 e
M
l2 l3 M
s s s
Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.
Type DMV1500L DMV1500LF5
s
Marking DMV1500L
Package TO-220AB
Weight 2.2 g.
Base qty 50
Delivery mode Tube
Epoxy meets UL94, V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
(R)
9/9

▲Up To Search▲

Price & Availability of DMV1500LF5

	To Download DMV1500LF5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .